standard byInternational Electrotechnical Commission , 11/01/2025
This document relates to a conductivity measurement method of thin metal films at microwave
and millimeter-wave frequencies. This method has been developed to evaluate the conductivity
of a metal foil used for adhering to a substrate or the interfacial conductivity of a metal layer
formed on a dielectric substrate. It uses higher-order modes of a balanced-type circular disk
resonator and provides broadband conductivity measurements by using a single resonator.
In comparison with the conventional method described in IEC 61788-7 [1]1, this method has the
following characteristics:
– the value of the conductivity σ of a metal foil can be measured accurately and
non-destructively;
– the value of the interfacial conductivity σ of a metal layer on a dielectric substrate can be
measured accurately and non-destructively;
– this method presents broadband measurements by using higher-order modes by one
resonator;
– this method is applicable for the measurements under the following conditions:
• frequency: 10 GHz ≤ f ≤ 170 GHz;
• conductivity: 105 S/m ≤σ ≤ 108 S/m.
